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| N-CHANNEL 600V - 1.0 - 7.2A TO-220/TO-220FP PowerMESHTM MOSFET Table 1. General Features Type STP7NB60 STP7NB60FP VDSS 600 V 600 V RDS(on) < 1.2 < 1.2 ID 7.2 A 4.1 A STP7NB60 STP7NB60FP Figure 1. Package FEATURES SUMMARY TYPICAL RDS(on) = 1.0 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 1 3 2 1 3 2 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING Figure 2. Internal Schematic Diagram SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Table 2. Order Codes Part Number STP7NB60 STP7NB60FP Marking P7NB60 P7NB60FP Package TO-220 TO-220FP Packaging TUBE TUBE REV. 2 April 2004 1/11 STP7NB60/FP Table 3. Absolute Maximum Ratings Value Symbol VDS VDGR VGS ID ID IDM (1) Ptot Parameter STP7NB60 Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (cont.) at TC = 25 C Drain Current (cont.) at TC = 100 C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor dv/dt (2) VISO Tstg Tj Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 7.2 4.5 28.8 125 1.0 4.5 - -65 to 150 150 600 600 30 4.1 2.6 28.8 40 0.32 4.5 2000 STP7NB60FP V V V A A A W W/C V/ns V C C Unit Note: 1. Pulse width limited by safe operating area 2. ISD 7A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX Table 4. Thermal Data Value Symbol Rthj-case Rthj-amb Tl Parameter TO-220 Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.0 62.5 300 TO220-FP 3.13 C/W C/W C Unit Maximum Lead Temperature For Soldering Purpose Table 5. Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy (starting Tj = 25 C; ID = IAR; VDD = 50 V) Max Value 7.2 580 Unit A mJ 2/11 STP7NB60/FP ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise specified) Table 6. Off Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 mA; VGS = 0 VDS = Max Rating VDS = Max Rating; Tc = 125 C VGS = 30 V Min. 600 1 50 100 Typ. Max. Unit V A A nA Table 7. On (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS; ID = 250 A VGS = 10V; ID = 3.6 A Min. 3 Typ. 4 1.0 Max. 5 1.2 Unit V Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Table 8. Dynamic Symbol gfs (1) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max; ID = 3.6 A VDS = 25 V; f = 1 MHz; VGS = 0 Min. 4 Typ. 5.3 1250 165 16 Max. Unit S Ciss Coss Crss 1625 223 22 pF pF pF Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Table 9. Switching On Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 300 V; ID = 3.6 A RG = 4.7 VGS = 10 V (see test circuit, Figure 18) VDD = 480 V ID = 7.2 A VGS = 10 V Min. Typ. 18 8 30 9.9 13.3 Max. 27 12 45 Unit ns ns nC nC nC Table 10. Switching Off Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 480 V; ID = 7.2 A; RG = 4.7 VGS = 10 V (see test circuit, Figure 20) Min. Typ. 8 5 15 Max. 12 8 23 Unit ns ns ns 3/11 STP7NB60/FP Table 11. Source Drain Diode Symbol ISD ISDM (1) VSD (2) trr Qrr IRRAM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse RecoveryCharge ISD = 7.2 A VGS = 0 ISD = 7.2; A di/dt = 100 A/s VDD = 100 V Tj = 150 C (see test circuit, Figure 20) 530 4.5 17 Test Conditions Min. Typ. Max. 7.2 28.8 Unit A A V ns C A Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Figure 3. Safe Operating Area for TO-220 Figure 4. Safe Operating Area for TO-220FP Figure 5. Thermal Impedance for TO-220 Figure 6. Thermal Impedance for TO-220FP 4/11 STP7NB60/FP Figure 7. Output Characteristics Figure 8. Transfer Characteristics Figure 9. Transconductance Figure 10. Static Drain-source On Resistance Figure 11. Gate Charge vs Gate-source Voltage Figure 12. Capacitance Variations 5/11 STP7NB60/FP Figure 13. Normalized Gate Thresold Voltage vs Temperature Figure 14. Normalized On Resistance vs Temperature Figure 15. Source-drain Diode Forward Characteristics 6/11 STP7NB60/FP Figure 16. Unclamped Inductive Load Test Circuit Figure 17. Unclamped Inductive Waveforms Figure 18. Switching Times Test Circuits For Resistive Load Figure 19. Gate Charge Test Circuit Figure 20. Test Circuit For Inductive Load Switching And Diode Recovery Times 7/11 STP7NB60/FP PACKAGE MECHANICAL Table 12. TO-220 Mechanical Data Symbol A b b1 c D E e e1 F H1 J1 L L1 L20 L30 OP Q 3.75 2.65 millimeters Min 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.85 2.95 0.147 0.104 Typ Max 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Min 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inches Typ Max 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 Figure 21. TO-220 Package Dimensions Note: Drawing is not to scale. 8/11 STP7NB60/FP Table 13. TO-220FP Mechanical Data Symbol A B C D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 P V V1 V2 O Min 4.40 2.50 1.00 2.50 0.40 0.75 1.15 1.15 4.95 2.40 10.00 28.60 9.80 3.30 15.90 9.00 5 50 44 3.00 100 46 3.20 50 44 0.118 millimeters Typ Max 4.60 2.70 1.30 2.75 0.70 1.00 1.70 1.70 5.20 2.70 10.40 30.60 10.60 3.50 16.40 9.30 1.60 Min 0.173 0.098 0.039 0.098 0.016 0.030 0.045 0.045 0.195 0.094 0.393 1.126 0.385 0.129 0.626 0.354 5 100 46 0.126 inches Typ Max 0.181 0.106 0.051 0.108 0.027 0.039 0.066 0.066 0.204 0.106 0.409 1.204 0.417 0.137 0.645 0.366 0.063 16.00 0.630 Figure 22. TO-220FP Package Dimensions H B C V L5 O V A V L6 V2 L7 P L3 V F2 F1 V L2 F L4 V1 F G1 G D E Note: Drawing is not to scale. 9/11 STP7NB60/FP REVISION HISTORY Table 14. Revision History Date July-1993 14-Apr-2004 Revision 1 2 First Issue Stylesheet update. No content change. Description of Changes 10/11 STP7NB60/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 11/11 |
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